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Small Signal Transistor Arrays
UNA0234
Silicon PNP epitaxial planar transistor (4 elements) Silicon NPN epitaxial planar transistor (4 elements)
Unit: mm
For motor drives For Small motor drive circuits in general Features
* Small and lightweight * Low power consumption * Low-voltage drive * With 8 elements incorporated
0.30.1 8 7654321
0.2+0.1 -0.0 (0.5)
5.50.3 7.70.3
45
9 10 11 12 13 14 15 16 0.750.1 6.50.3
(0.8) 1.50.1 1.5+0.2 -0.1
Absolute Maximum Ratings Ta = 25C
Parameter PNP Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Peak collector current NPN Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Peak collector current Overall Total power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO IC ICP VCBO VCEO IC ICP PT Tj Tstg Rating -10 -10 -1.5 -2 10 10 1.5 2 0.5 150 -55 to +150 Unit V V A A V V A A W C C
12
1: Emitter 2: Base 3: Collector 4: Base
5: Emitter 6: Base 7: Collector 8: Base
9: Emitter 10: Base 11: Collector 12: Base
12
13: Emitter 14: Base 15: Collector 16: Base
SO16-G1 Package
Marking Symbol: UN234 Internal Connection
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
Note) *: When the dissipation on one device is TC = 25C
Electrical Characteristics Ta = 25C 3C
* PNP
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Base-emittter resistance *1 Forward voltage *2 Symbol VCBO VCEO ICBO ICEO hFE VCE(sat) RBE VF IF = - 0.5 A Conditions IC = -10 A, IE = 0 IC = -1 mA, IB = 0 VCB = -10 V, IE = 0 VCE = -10 V, IB = 0 VCE = -1 V, IC = -400 mA IC = -1 A, IB = -25 mA -30% 12.5 200 Min -10 -10 -1 -2 700 - 0.35 +30% -1.3 Typ Max Unit V V A A V k V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Application to the internal resistance *2: Application to the internal diode
Publication date: December 2002 SJK00053AED
0.50.2
1
UNA0234
Electrical Characteristics (continued) Ta = 25C 3C
* NPN
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Base-emittter resistance *1 Forward voltage *2 Symbol VCBO VCEO ICBO ICEO hFE VCE(sat) RBE VF IF = 0.5 A Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VCE = 1 V, IC = 400 mA IC = 1 A, IB = 25 mA -30% 12.5 200 Min 10 10 1 2 700 0.25 +30% 1.3 Typ Max Unit V V A A V k V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Application to the internal resistance *2: Application to the internal diode
Common characteristics chart PT Ta
0.6
Total power dissipation PT (W)
0.5
0.4
0.3
0.2
0.1
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of PNP transistor block IC VCE
- 0.8 IB = -1.0 mA - 0.6 - 0.9 mA Ta = 25C - 0.8 mA
-1.0 -1.2
IC VBE
VCE = -1 V 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10 IC / IB = 40
Collector current IC (A)
Collector current IC (A)
- 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA
-1
- 0.8
Ta = 85C
-25C
- 0.4
- 0.6
- 0.1
25C
Ta = 85C -25C
- 0.4
- 0.2
- 0.01
- 0.2
0
0
-2
-4
-6
-8
-10
-12
0
0
- 0.2 - 0.4 - 0.6 - 0.8 -1.0
-1.2
- 0.001 - 0.001
- 0.01
- 0.1
-1
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector current IC (A)
2
SJK00053AED
UNA0234
hFE IC
VCE = -1 V Ta = 85C 400 25C 300
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1 000 f = 1 MHz Ta = 25C
500
Forward current transfer ratio hFE
-25C
100
200
100
0 - 0.001
- 0.01
- 0.1
-1
-10
10
0
-5
-10
-15
-20
-25
Collector current IC (A)
Collector-base voltage VCB (V)
Characteristics charts of NPN transistor block IC VCE
0.9 0.8 0.7 IB = 1.0 mA 0.9 mA 0.8 mA
1.0 25C
IC VBE
Collector-emitter saturation voltage VCE(sat) (V)
Ta = 25C
1.2 VCE = 1 V
VCE(sat) IC
1 IC / IB = 40
Collector current IC (A)
0.6 0.5 0.4 0.3 0.2 0.1 0
0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA
Collector current IC (A)
0.7 mA
0.8
Ta = 85C -25C
0.1 Ta = 85C -25C 0.01
0.6
25C
0.4
0.2
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
1
10
100
1 000
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
VCE = 1 V Ta = 85C 25C 700
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
100 f = 1 MHz Ta = 25C
800
Forward current transfer ratio hFE
600 500 400 300 200 100 0 0.001
-25C
10 0 5 10
0.01
0.1
1
10
15
20
25
Collector current IC (A)
Collector-base voltage VCB (V)
SJK00053AED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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